DSEP15-06A low loss and soft recovery high performance fast recovery diode single diode hiperfred 1 3 part number DSEP15-06A backside: cathode fav rr tns 35 rrm 15 600 = v= v i= a features / advantages: applications: package: planar passivated chips very low leakage current very short recovery time improved thermal behaviour very low irm-values very soft recovery behaviour avalanche voltage rated for reliable operation soft reverse recovery for low emi/rfi low irm reduces: - power dissipation within the diode - turn-on loss in the commutating switch antiparallel diode for high frequency switching devices antisaturation diode snubber diode free wheeling diode rectifiers in switch mode power supplies (smps) uninterruptible power supplies (ups) to-220 industry standard outline rohs compliant epoxy meets ul 94v-0 ixys reserves the right to change limits, conditions and dimensions. 20120318a data according to iec 60747and per semiconductor unless otherwise specified ? 2012 ixys all rights reserved
DSEP15-06A n s 5 a t vj =c reverse recovery time a 7 35 95 n s i rm max. reverse recovery current i f =a; 15 25 t=100c vj -di f =a/s 200 /dt t rr v r =v 300 t vj =c 25 t=100c vj e as 0.1 mj i as =al =h i ar a v a =0.1 f = 10 khz 1.5v r typ.: 1 180 non-repetitive avalanche energy repetitive avalanche current t= c 25 vj v = v symbol definition ratings typ. max. i r v i a v f 2.04 r 1.6 k/ w r min. 15 v rsm v 100 t = 25c vj t = c vj m a 0.5 v = v r t = 25c vj i = a f v t = c c 140 p tot 95 w t = 25c c r k/ w 15 600 max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation conditions uni t 2.25 t = 25c vj 150 v f0 v 0.99 t = c vj 175 r f 15 m ? threshold voltage slope resistance for power loss calculation only a 150 v rrm v 600 max. repetitive reverse blocking voltage t = 25c vj c j 12 j unction capacitance v = v 400 t = 25c f = 1 mhz r vj p f i fsm t = 10 ms; (50 hz), sine; t = 45c vj max. forward surge current v = 0 v r t = c vj 175 110 a 600 fav d = rectangular 0.5 average forward current thermal resistance junction to case thjc thermal resistance case to heatsink thch fast diode 600 0.50 ixys reserves the right to change limits, conditions and dimensions. 20120318a data according to iec 60747and per semiconductor unless otherwise specified ? 2012 ixys all rights reserved
DSEP15-06A ratings xxxxxx yyww z logo part number date code lot # abcdef product markin g a ssembly line package t vj c m d nm 0.6 mounting torque 0.4 t stg c 150 storage temperature -55 weight g 2 symbol definition typ. max. min. conditions virtual junction temperature unit f c n 60 mounting force with clip 20 i rms rms current 35 a per terminal 175 -55 to-220 similar part package voltage class dsep15-06b to-220ac (2) 600 delivery mode quantity code no. part number marking on product ordering DSEP15-06A 473529 tube 50 DSEP15-06A standard threshold voltage v 0.99 m ? v 0 max r 0 max slope resistance * 12 equivalent circuits for simulation t = vj i v 0 r 0 fast diode 175c * on die level ixys reserves the right to change limits, conditions and dimensions. 20120318a data according to iec 60747and per semiconductor unless otherwise specified ? 2012 ixys all rights reserved
DSEP15-06A dim. millimeter inches min. max. min. max. a 4.32 4.82 0.170 0.190 a1 1.14 1.39 0.045 0.055 a2 2.29 2.79 0.090 0.110 b 0.64 1.01 0.025 0.040 b2 1.15 1.65 0.045 0.065 c 0.35 0.56 0.014 0.022 d 14.73 16.00 0.580 0.630 e 9.91 10.66 0.390 0.420 e 5.08 bsc 0.200 bsc h1 5.85 6.85 0.230 0.270 l 12.70 13.97 0.500 0.550 l1 2.79 5.84 0.110 0.230 ?p 3.54 4.08 0.139 0.161 q 2.54 3.18 0.100 0.125 2x b2 e ?p q d l1 l 2x b e c a2 h1 a1 a 13 4 1 3 outlines to-220 ixys reserves the right to change limits, conditions and dimensions. 20120318a data according to iec 60747and per semiconductor unless otherwise specified ? 2012 ixys all rights reserved
DSEP15-06A 200 600 1000 0 400 800 70 80 90 100 110 120 0.00001 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 04080120160 0.0 0.5 1.0 1.5 2.0 0 200 400 600 800 1000 0 5 10 15 20 0.0 0.4 0.8 1.2 1.6 v 200 600 1000 0400800 0 10 20 30 40 0 0 0 1 0 0 1 0 500 1000 1500 2000 012 0 10 20 30 40 k f t vj [c] t[s] v fr [v] i rm [a] q r [ c] i f [a] v f [v] -di f /dt [a/ s] t rr [ns] t rr [ s] z thjc [k/w] -di f /dt [a/ s] -di f /dt [a/ i d - ] s f /dt [a/ s] fig. 1 forward current i f versus v f fig. 2 typ. reverse recov. charge q r versus -di f /dt fig. 3 typ. peak reverse current i rm versus -di f /dt fig. 4 dynamic parameters q r ,i rm versus t vj fig. 5 typ. recovery time t rr versus -di f /dt fig. 6 typ. peak forward voltage v fr and t fr versus di f /dt fig. 7 transient thermal impedance junction to case v fr t rr constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.908 0.0052 2 0.350 0.0003 3 0.342 0.017 t vj =150c 100c 25c i f =30a 15 a 7.5 a t vj =100c v r =300v t vj = 100c v r = 300 v i f =30a 15 a 7.5 a i f = 30a 15 a 7.5 a t vj =100c v r =300v i rm q r t vj =100c i f =15a fast diode ixys reserves the right to change limits, conditions and dimensions. 20120318a data according to iec 60747and per semiconductor unless otherwise specified ? 2012 ixys all rights reserved
|
